The China Integrated Circuit Industry Investment Fund Phase III has fully entered the stage of substantive investment and implementation. Its strategic positioning has upgraded from the initial foundational goal of making up shortcomings and building the framework to strengthening strengths and breaking bottlenecks, focusing efforts on tackling core bottleneck technologies that constrain industrial development.

This strategic upgrade is clearly reflected in the investment structure. Phase III of the National IC Fund has defined two major development themes: localization of semiconductor equipment and materials, as well as advanced packaging, AI chips and high-end storage. This provides a clear development direction for upstream enterprises engaged in key industrial chain links. Against this backdrop, leveraging its technological accumulation in the field of semiconductor ultra-clean materials, BSL (Baishili) has accurately integrated its high-performance high-end consumables into the accelerated process of domestic substitution.

In the semiconductor equipment sector, Phase III continues to invest in leading domestic equipment enterprises, promoting the large-scale application and upgrading of key equipment at mature process nodes, with the localization rate of mature process equipment rising steadily.

Investment in key semiconductor materials embodies the core breakthrough philosophy of the National IC Fund Phase III. While domestic breakthroughs have been achieved in core new materials such as chemical mechanical polishing slurry and photoresist strippers, the stability of supporting transmission and storage links is equally indispensable.

Ultra-Clean PFA Tube, Ultra-Clean PFA Connector and Ultra-Clean HDPE Drum from BSL are essential consumables for the stable transmission and reliable storage of chemical materials. With its expertise in clean material forming and processing technology, as well as extreme control over metal ion precipitation, BSL delivers reliable solutions for the transmission and storage of these critical new materials.

This means that besides the localization of equipment and materials, the high-purity media connecting equipment and materials also need to achieve synchronized domestic substitution.